ELSPES Achieves Breakthrough in Silicon Capacitor Density: 2,500 nF/mm² with Ultra-Wideband Low Impedance

ELSPES Inc. has announced the successful development of its next-generation ultra-dense silicon capacitor, achieving a record capacitance density of 2,500 nF/mm²—a 67% increase from its 2024 model. This breakthrough further cements ELSPES’s leadership in advanced power delivery solutions and supports growing demands in AI, high-performance computing, and automotive electronics.

The newly released device provides up to 3,000 nF in an ultra-compact 1.0 mm × 1.2 mm footprint, while maintaining a breakdown voltage of 4 V, ESR below 5 mΩ, and ESL under 1 pH. These specifications translate into an exceptionally wide low-impedance bandwidth, staying below 20 mΩ from 2.8 MHz to 9.3 GHz—more than 3,000 times wider than conventional MLCCs. This allows for superior power integrity, reduced noise, and minimized component count in densely packed systems.

     “This milestone reflects our long-term commitment to pushing the boundaries of silicon capacitor scaling while preserving electrical reliability.” 

     “As chiplet-based architectures and heterogeneous integration accelerate, our technology is uniquely positioned to meet the power integrity needs of next-generation platforms.”

The capacitor is available in both surface-mount and embedded formats, enabling flexible integration in application processors, CPU/GPU modules, SiPs, and automotive systems. Its compact footprint and ultra-low parasitics enable faster transient response and tighter impedance control, making it ideal for AI, edge computing, and mission-critical environments.

The announcement was featured in Semiconductor Packaging News (SPN) on July 3, 2025, under its Industry Press spotlight, reflecting the market’s growing recognition of ELSPES’s innovation roadmap.